DMC3021LK4 document number: ds35082 rev. 5 - 2 1 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product complementary pair enh ancement mode mosfet product summary device v (br)dss r ds(on) max i d max t c = +25c q1 30v 21m ? @ v gs = 10v 14a 32m ? @ v gs = 4.5v 14a q2 -30v 39m ? @ v gs = -10v -14a 53m ? @ v gs = -4.5v -14a description and applications this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. ? motor control ? power management functions ? dc-dc converters ? backlighting features and benefits ? 0.6mm profile ? ideal for low profile applications ? pcb footprint of 4mm 2 ? low gate threshold voltage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability mechanical data ? case: to252-4 ? case material: molded plastic, "g reen" molding compound ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections indicator: see diagram ? terminals: finish ? matte ti n annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.027 grams (approximate) ordering information (note 4) part number case packaging DMC3021LK4-13 to252-4 2500/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/p roducts/packages.html marking information c3021l yyww = manufacturer?s marking c3021l = product type marking code yyww = date code marking yy = year (ex: 11 = 2011) ww = week (01 - 53) top view bottom view pinout top view n-channel mosfet p-channel mosfet d s2 g2 d s1 g1 d d g1 s2 s1 g2 to252-4l
DMC3021LK4 document number: ds35082 rev. 5 - 2 2 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product maximum ratings n-channel ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = 10v steady state t a = +25c t a = +70c i d 9.4 7.5 a continuous drain current (note 6) v gs = 10v steady state t c = +25c t c = +70c i d 14 14 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 70 a avalanche current, (notes 7) l = 0.1mh i as 16 a avalanche energy, (notes 7) l = 0.1mh e as 13 mj maximum ratings p-channel ? q2 (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 6) v gs = -10v steady state t a = +25c t a = +70c i d -6.8 -5.3 a continuous drain current (note 6) v gs = -10v steady state t c = +25c t c = +70c i d -14 -14 a pulsed drain current (10s pulse, duty cycle = 1%) i dm -50 a avalanche current, (notes 7) l = 0.1mh i as -16 a avalanche energy, (notes 7) l = 0.1mh e as 13 mj thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 6) t a = +25c p d 2.7 w t a = +70c 1.7 total power dissipation (note 6) t c = +25c 22 t c = +70c 14 thermal resistance, junction to ambient (note 6) steady state r ja 46 c/w thermal resistance, junction to case (note 6) steady state r jc 5.5 operating and storage temperature range t j, t stg -55 to +150 c notes: 5. device mounted on fr-4 pc board, with minimum recommended pad layout, single sided. 6. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal bias to bottom layer 1inch square copper plate 7. i as and e as rating are based on low frequency and duty cycles to keep t j = 25c 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing.
DMC3021LK4 document number: ds35082 rev. 5 - 2 3 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product electrical characteristics n-channel ? q1 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current @t c = +25c i dss ? ? 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) 1 1.5 2.1 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds(on) ? 14 21 m ? v gs = 10v, i d = 7a ? 18 32 v gs = 4.5v, i d = 5.6a forward transfer admittance |y fs | ? 8.5 ? s v ds = 5v, i d = 7a diode forward voltage v sd ? 0.7 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 9) input capacitance c iss ? 751 ? pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 121 ? pf reverse transfer capacitance c rss ? 110 ? pf gate resistance r g ? 1.5 ? ? v ds = 10v, v gs = 0v,f = 1.0mhz total gate charge (4.5v) q g ? 9 ? nc v gs = 10v, v ds = 15v, i d = 6a total gate charge (10v) q g ? 17.4 ? nc gate-source charge q gs ? 2.2 ? nc gate-drain charge q gd ? 3 ? nc turn-on delay time t d(on) ? 2.5 ? ns v dd = 15v, v gs = 10v, r g = 6 ? , r l = 1.8 ? , i d = 6.7a turn-on rise time t r ? 6.6 ? ns turn-off delay time t d(off) ? 19.0 ? ns turn-off fall time t f ? 6.3 ? ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing. 0 5 10 15 20 25 30 0 0.5 1 1.5 2 v , drain-source voltage (v) ds fig.1 typical output characteristics v = 2.5v gs v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v= 10v gs i, d r ai n c u r r e n t (a) d 0 5 10 15 20 012345 v , gate-source voltage (v) gs fig. 2 typical transfer characteristics t = a -55c v = 5.0v ds t = a 25c t = a 85c t = 150c a t = a 125c i , drain current (a) d
DMC3021LK4 document number: ds35082 rev. 5 - 2 4 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 i , drain-source current (a) d fig. 3 typical on-resistance vs. drain current and gate voltage r , drain-source on-resistance( ) ds(on) v = 10v gs v = 4.5v gs 0 0.01 0.02 0.03 0.04 0.05 024 68101214161820 i , drain current (a) d fig. 4 typical on-resistance vs. drain current and temperature t = a -55c t = a 25c t = a 85c t = 125c a t = a 150c v = 4.5v gs r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) v = 4.5v i= 5a gs d v = 10v i=10a gs d t , junction temperature ( c) j fig. 6 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.0 5 -50 -25 0 25 50 75 100 125 150 v = 4.5v i=5a gs d v = 10v i = 10a gs d t , junction temperature ( c) j fig. 7 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 0.5 1 1.5 2 2.5 v , gate threshold voltage (v) gs(th) i = 250a d i= 1ma d 0 2 4 6 8 10 12 14 16 18 20 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v , source-drain voltage (v) sd fig. 8 diode forward voltage vs. current i , source current (a) s t = 25c a
DMC3021LK4 document number: ds35082 rev. 5 - 2 5 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product 1 10 100 1,000 10,000 0 5 10 15 20 25 30 v , drain-source voltage (v) ds fig. 9 typical drain-source leakage current vs. voltage i , leakage current (na) dss t = a 25c t = a 85c t = a 125c t = 150c a 10 100 1,000 10,000 0 5 10 15 20 25 30 v , drain-source voltage(v) ds fig. 10 typical junction capacitance c iss c oss c rss f=1mhz c t , j u n c t i o n c a p a c i t an c e ( p f ) 0 2 4 6 8 10 0246 8101214161820 q - (nc) g fig. 11 gate charge characteristics v = 15v i=6a ds d v (v) gs 0.1 1 10 100 v , drain-source voltage (v) ds fig. 12 soa, safe operation area 0.01 0.1 1 10 100 p = 10s w dc p=1s w p = 100ms w p = 10ms w i , drain current (a) d t = 150 c t= 25c single pulse j(max) a r limited ds(on) p = 10s w p=1ms w p = 100s w
DMC3021LK4 document number: ds35082 rev. 5 - 2 6 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product electrical characteristics p-channel ? q2 (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss -30 ? ? v v gs = 0v, i d = -250 a zero gate voltage drain current @t c = +25c i dss ? ? -1 a v ds = -30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8) gate threshold voltage v gs(th) -1 -1.7 -2.2 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) ? 30 39 m ? v gs = -10v, i d = -4.3a ? 42 53 v gs = -4.5v, i d = -3.7a forward transfer admittance |y fs | ? 10 ? s v ds = -5v, i d = -4.3a diode forward voltage v sd ? -0.75 -1.0 v v gs = 0v, i s = -1a dynamic characteristics (note 9) input capacitance c iss ? 1039 ? pf v ds = -10v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 144 ? pf reverse transfer capacitance c rss ? 134 ? pf gate resistance r g ? 13 ? ? v ds = 0v, v gs = 0v,f = 1.0mhz total gate charge (4.5v) q g ? 10.1 ? nc v gs = -10v, v ds = -15v, i d = -6a total gate charge (10v) q g ? 21.1 ? nc gate-source charge q gs ? 2.8 ? nc gate-drain charge q gd ? 3.2 ? nc turn-on delay time t d(on) ? 10.1 ? ns v ds = -15v, v gs = -10v, r g = 6 ? , i d = -1a turn-on rise time t r ? 6.5 ? ns turn-off delay time t d(off) ? 50.1 ? ns turn-off fall time t f ? 22.2 ? ns notes: 8. short duration pulse test used to minimize self-heating effect. 9. guaranteed by design. not subject to product testing. 0 5 10 15 20 25 30 00.511.52 -v , drain-source voltage (v) ds fig.13 typical output characteristics -v = 3.0v gs -v = 4.0v gs -v = 4.5v gs -v = 10v gs -i , d r ain c u r r en t (a) d -v = 3.5v gs -v = 2.0v gs -v = 2.5v gs 0 5 10 15 20 012345 -gs v , gate-source voltage (v) fig. 14 typical transfer characteristics t = -55c a v = -5.0v ds t = a 25c t = a 85c t = a 150c t = a 125c -i , drain current (a) d
DMC3021LK4 document number: ds35082 rev. 5 - 2 7 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product 0 5 10 15 20 -i , drain-source current (a) d fig. 15 typical on-resistance vs. drain current and gate voltage r , d r ain-s o u r ce o n- r esistance( ) ds(on) 0 0.02 0.04 0.06 0.08 0.10 -v = 4.5v gs -v = 10v gs 02468101214161820 -i , drain current (a) d fig. 16 typical on-resistance vs. drain current and temperature r , d r ain-s o u r ce o n- r esistance ( ) ds(on) 0 0.02 0.04 0.06 0.08 0.10 0.1 2 t = a -55c t = a 25c t = a 85c t = a 125c t = 150c a v = 4.5v gs 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 17 on-resistance variation with temperature r , drain-source on-resistance (normalized) ds(on) -v = 10v -i = 10a gs d t , junction temperature ( c) j fig. 18 on-resistance variation with temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) -50 -25 0 25 50 75 100 125 150 0 0.02 0.04 0.06 0.08 -v = 10v -i = 10a gs d -v = 4.5v -i = 5a gs d t , junction temperature ( c) j fig. 19 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 -v , g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.5 1 1.5 2 2.5 -i = 250a d -i = 1ma d 0 2 4 6 8 10 12 14 16 18 20 -v , source-drain voltage (v) sd fig. 20 diode forward voltage vs. current -i , s o u r c e c u r r en t (a) s 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t = 25c a
DMC3021LK4 document number: ds35082 rev. 5 - 2 8 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product 0 5 10 15 20 25 30 -v , drain-source voltage (v) ds fig. 21 typical drain-source leakage current vs. voltage -i , leaka g e c u r r en t (na) dss 0.1 1 10 100 1,000 10,000 t = a 85c t = a 125c t = a 150c t = 25c a 10 100 1,000 10,000 0 5 10 15 20 25 30 v , drain-source voltage(v) ds fig. 22 typical junction capacitance c iss c oss c rss f = 1mhz c t , j u n c t i o n c a p a c i t an c e ( p f ) q - (nc) g fig. 23 gate charge characteristics v (v) gs 0 2 4 6 8 10 0 5 10 15 20 25 v= 15v i=6a ds d 0.1 1 10 100 -v , drain-source voltage (v) ds fig. 24 soa, safe operation area 0.01 0.1 1 10 100 p = 10s w dc p=1s w p = 100ms w p = 10ms w -i , d r ain c u r r ent (a) d p = 10s w r limited ds(on) t = 150 c t= 25c single pulse j(max) a p=1ms w p = 100s w 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 25 transient thermal resistance r(t), transient thermal resistance d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse d = 0.9 d = 0.7 r (t) = r(t) * r ? ja ja r = 46c/w duty cycle, d = t1 / t2 ja
DMC3021LK4 document number: ds35082 rev. 5 - 2 9 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product package outline dimensions please see ap02002 at http://www.diodes.com/dat asheets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. to252-4 dim min max typ a 2.19 2.39 2.29 a1 0.00 0.13 0.08 a2 0.97 1.17 1.07 b 0.51 0.71 0.583 b2 0.61 0.79 0.70 b3 5.21 5.46 5.33 c2 0.45 0.58 0.531 d 6.00 6.20 6.10 d1 5.21 ? ? e ? ? 1.27 e 6.45 6.70 6.58 e1 4.32 ? ? h 9.40 10.41 9.91 l 1.40 1.78 1.59 l3 0.88 1.27 1.08 l4 0.64 1.02 0.83 a 0 10 ? all dimensions in mm dimensions value (in mm) c 1.27 c1 2.54 x 1.00 x1 5.73 y 2.00 y1 6.17 y2 1.64 y3 2.66 b3 e 4x b2 d l4 a c2 e a1 l l3 5x b a h a2 e1 x1 y1 y2 y3 y x (4x) c c1
DMC3021LK4 document number: ds35082 rev. 5 - 2 10 of 10 www.diodes.com april 2014 ? diodes incorporated DMC3021LK4 new product important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2014, diodes incorporated www.diodes.com
|
